1 3 2 lmb t a55 l t1g case 318?08, style 6 sot?23 (to?236ab) maximum r a tings rating symbol lmb t a5 5 lmb t a5 6 unit collector?emitter v oltage v ceo ?60 ?8 0 vdc collector?base voltage v cbo ?60 ?80 vdc emitter?base voltage v ebo ?4.0 vdc collector current ? continuous i c ?500 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking lmb t a55 l t1g = 2h; lmb t a56 l t1g = 2gm electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (3) v (br)ceo vdc (i c = ?1.0 madc, i b = 0 ) lmb t a55 ?60 ? lmb t a56 ?80 ? emitter?base breakdown voltage v (br)ebo ?4.0 ? vdc (i e = ?100 adc, i c = 0 ) collector cutoff current i ces ? ?0.1 adc ( v ce = ?60vdc, i b = 0) collector cutoff current i cbo adc ( v cb = ?60vdc, i e = 0) lmb t a55 ? ?0.1 ( v cb = ?80vdc, i e = 0) lmb t a56 ? ?0.1 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. 2 emitter 3 collector 1 base value we declare that the material of product compliance with rohs requirements. product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe ? (i c = ?10 madc, v ce = ?1.0 vdc) 100 ? (i c = ?100madc, v ce = ?1.0 vdc) 100 ? collector?emitter saturation voltage v ce(sat) ? ?0.25 vdc (i c = ?100madc, i b = ?10madc) base?emitter on voltage v be(on) ? ?1.2 vdc (i c = ?100madc, v ce = ?1.0vdc) small?signal characteristics current ?gain?bandwidth product(4) f t 50 ? mhz (v ce = ?1.0 vdc, i c = ?100madc, f = 100 mhz) 4. f t is defined as the frequency at which |h f e | extrapolates to unity. LMBTA55LT1G 2h 3000/ t ape & reel device marking shipping lmbta56lt1g 2gm 3000/ t ape & reel lmbta55lt3g 2h lmbta56lt3g 2gm 10000/ t ape & reel ordering information 10000/ t ape & reel figure 1. switching time test circuits output turn?on time ?1.0 v v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t r = 3.0 ns 0 +10 v 5.0 s output turn?off time +v bb v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t r = 3.0 ns 5.0 s *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all voltage polarities product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com lmb t a55 l t1g
notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com lmb t a55 l t1g
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